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FTZ6.8E
Diodes
Zener diode
FTZ6.8E
!Applications Noise suppression on single line Constant voltage control !External dimensions (Units : mm)
2.90.2 1.90.2 0.95 0.95
1.1+0.2 -0.1 0.80.1 0.30.6
!Features 1) Small surface mounting type. (SMD5) 2) Multiple diodes with common anode configuration. 3) High reliability.
D6F
2.80.2
1.6+0.2 -0.1
00.1
0.3 +0.1 -0.05
+0.1 0.15 -0.06
(All leads have the same dimensions.)
!Construction Silicon epitaxial planar
ROHM : SMD5 EIAJ : SC-74A JEDEC : -
!Circuit
!Absolute maximum ratings (Ta=25C)
Parameter Power dissipation Junction temperature Storage temperature
Total of 4 elements
Symbol
P
Limits 200 125 -55+125
Unit mW C C
Tj Tstg
!Electrical characteristics (Ta=25C)
Parameter Zener voltage Reverse current Operating resistance Rising operating resistance Symbol VZ IR Zz ZZK Min. 6.47 - - - Typ. - - - - Max. 7.14 0.5 40 60 Unit V A IZ=5mA VR=3.5V IZ=5mA IZ=0.5mA Conditions
FTZ6.8E
Diodes
!Others
Item Device configuration Standard 1 Charge/discharge capacitance : 200 pF 10% Discharge resistance : 400 10% 5 repetitions No spark or smoke emitted No element destruction No malfunction : 25 kV : 20 kV : 8 kV IEC1000-4-2 Charge/discharge capacitance : 150 pF Discharge resistance : 330 10 repetitions No malfunction Contact : 8 kV Suspended : 15 kV
Judgment contents
!Electrical characteristic curves (Ta=25C)
100m 10m 1m
-20C 25C
300
POWER DISSIPATION : Pd (mW)
70C
ZENER CURRENT : Iz (A)
200
100 10 1 100n 2 3 4 5 6 7 8
100
0 0
25
50
75
100
125
200
ZENER VOLTAGE : Vz (V)
AMBIENT TEMPERATURE : Ta (C)
Fig.1 Zener characteristics
Fig.2 Derating curve

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